The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FOD814 Datasheet |
Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
---|---|---|---|---|
FOD8143SD | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.2002 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
TAPE REEL
| Line 1N/A
|
FOD8143S | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.184 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD814SD | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1675 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
TAPE REEL
| Line 1N/A
|
FOD814300W | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.2166 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD814300 | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1675 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD814S | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1349 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD814 | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1512 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|