The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FOD817D Datasheet |
Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
---|---|---|---|---|
FOD817D300W | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1337 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD817DSD | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.109 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
TAPE REEL
| Line 1N/A
|
FOD817DS | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1011 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD817D300 | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.109 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD817D3S | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1173 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|
FOD817D3SD | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.1256 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
TAPE REEL
| Line 1N/A
|
FOD817D | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.0928 | MDIP 4L
-
3.5 x 4.6 x 6.5mm,
BOX
| Line 1N/A
|