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FQB22P10TM_F085: -100V, -22A, 125mΩ, D2PAKP-Channel QFET®
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
| FQB22P10TM_F085 Datasheet |
Features
- -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
- Low gate charge ( typical 40 nC)
- Low Crss ( typical 160 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Qualified to AEC Q101
- RoHS Compliant
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| FQB22P10TM_F085 | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.8709 | TO-263 2L (D2PAK)
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4.445 x 10.16 x 15.24mm,
TAPE REEL
| Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2FQB |
- TO-263 2L (D2PAK) Drawing Last Update: May 2016
- TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016
- TO263-2L, PACKING DRAWING Last Update: May 2013
- TO263_TUBE PACKING DRAWING Last Update: Jun 2013
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