FQB33N10: N-Channel QFET® MOSFET 100V, 33A, 52mΩ

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

• "
• 33A, 100V, R_DS(on) = 52mΩ(Max.) @V_GS = 10 V, I_D = 16.5A
• Low gate charge ( Typ. 38nC)
• Low C_rss ( Typ. 62pF)
• 100% avalanche tested
• 175°C maximum junction temperature rating"

Application Notes