FQB8N90CTM: N-Channel QFET® MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 6.3 A, 900 V, R_DS(on) = 1.9 Ω (Max.) @ V_GS = 10 V
• Low Gate Charge (Typ. 35 nC)
• Low C_rss (Typ. 12 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability

Application Notes