FQD10N20L: N-Channel QFET® MOSFET 200V, 7.6A, 380mΩ _ BDTIC a Leading Distributor in China

FQD10N20L: N-Channel QFET® MOSFET 200V, 7.6A, 380mΩ

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQD10N20L Datasheet

Features

7.6A, 200V, R_DS(on) = 360mΩ @V_GS = 10 V, I_D = 3.8A
Low gate charge (Typ. 13nC)
Low C_rss ( Typ. 14pF)
100% avalanche tested
Low level gate drive requirement allowing direct operation from logic driversdrivers

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FQD10N20LTF	Obsolete as of 02-Mar-2011 ROHS Compliant as of 27-Feb-2006 Replacement Part: FQD10N20LTM China RoHS	N/A	TO-252 3L (DPAK) - 2.285 x 6.54 x 9.905mm, TAPE REEL TO-252 3L (DPAK) Drawing Last Update: Jun 2016 TO252-3L, JEDEC OPTION AA REEL PACKING DRAWING Last Update: Oct 2016 TO252-3L, PACKING DRAWING Last Update: May 2013 TO252-3L packing drawing Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
FQD10N20LTM	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$0.666	TO-252 3L (DPAK) - 2.38 x 6.54 x 9.49mm, TAPE REEL TO-252 3L (DPAK) Drawing Last Update: Sep 2016 TO252-3L, SURFACE MOUNT JEDEC, VARIATION AB, PACKING DRAWING Last Update: Oct 2016	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FQD Line 310N20L