FQP13N10L: N-Channel QFET® MOSFET 100V, 12.8A, 180mΩ
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- "
- 12.8A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 6.4A
- Low gate charge ( Typ. 8.7nC)
- Low Crss ( Typ. 20pF)
- 100% avalanche tested
- 175°C maximum junction temperature rating"
Ordering Code| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|
| FQP13N10L | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $0.666 | TO-220 3L
-
4.83 x 10.16 x 8.89mm,
RAIL | Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K
Line 2FQP
Line 313N10L
|
Application Notes
AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011AN-9010 MOSFET Basics Last Update : 09-Sep-2013AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
