FQPF3N25: N-Channel QFET® MOSFET 250V, 2.3A, 2.2Ω

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters, switch mode power supply.

Features

• 2.3 A, 250 V, R_DS(on) = 2.2 Ω (Max.) @ V_GS = 10 V, I_D = 1.15 A
• Low Gate Charge (Typ. 4.0 nC)
• Low Crss (Typ. 4.7 pF)
• 100% Avalanche Tested

Application Notes