FQPF3N80C: N-Channel QFET® MOSFET 800V, 3A, 4.8Ω _ BDTIC a Leading Distributor in China

FQPF3N80C: N-Channel QFET® MOSFET 800V, 3A, 4.8Ω

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQPF3N80C Datasheet

Features

"
3A, 800V, R_DS(on) = 4.8Ω(Max.) @V_GS = 10 V, I_D = 1.5A
Low gate charge ( Typ. 13nC)
Low C_rss ( Typ. 5.5pF)
100% avalanche tested"

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
FQPF3N80C	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$1.008	TO-220F 3L - 4.7 x 10.06 x 15.87mm, RAIL TO-220F 3L Drawing Last Update: Feb 2017 TO220-3L, FULL PACK, STRAIGHT LEAD, PACKING DRAWING Last Update: May 2013 TO220F-3L, PACKING DRAWING Last Update: May 2013 TO220-3L FULL PACKING TUBE PACKING DRAWING Last Update: May 2013 TO220F_PACKING DRAWING Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2FQPF Line 33N80C
FQPF3N80CYDTU	Obsolete as of 21-Sep-2011 ROHS Compliant as of 27-Feb-2006 Replacement Part: FQPF3N80C China RoHS	N/A	TO-220F 3L - 4.5 x 9.9 x 15.7mm, RAIL TO-220F 3L Drawing Last Update: Feb 2017 TO220-3L, FULLPACK, EIAJ SC-65, Y-FORMED LEADS, PACKING DRAWING Last Update: May 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K