H11F1M: 6-Pin DIP Bilateral Analog FET Output Optocoupler

The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Features

• ≤ 100Ω to ≥ 300MΩ
• ≤ 15pF shunt capacitance
• ≥ 100GΩ I/O isolation resistance
• Extremely low offset voltage
• 60 V_pk-pk signal capability
• No charge injection or latch-up
• UL recognized (File #E90700)