HGTG30N60A4: 600V, SMPS IGBT
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Features
- 60A, 600V @ TC = 110°C
- Low Saturation Voltage : V CE(sat) = 1.8 V @ I C = 30A
- Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C
- Low Conduction Loss
Ordering CodeProduct | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
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HGTG30N60A4 | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $6.39 | TO-247 3L
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4.7 x 15.62 x 20.57mm,
RAIL | Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2G30N60A4
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Application Notes
AN-6004 500W Power-Factor-Corrected (PFC) Converter Design with FAN4810 Last Update : 05-Mar-2011