HGTG30N60B3: 600V, PT IGBT
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
Features
- 30A, 600V, TC= 110°C
- Low saturation voltage: VCE(sat) = 1.45V @ IC = 30A
- Typical Fall Time. . . . . . . . 90ns at TJ= 150°C
- Short Circuit Rating
- Low Conduction Loss
Ordering Code| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|
| HGTG30N60B3 | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $6.24 | TO-247 3L
-
4.7 x 15.62 x 20.57mm,
RAIL | Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K
Line 2G30N60B3
|
Application Notes
AN-7520 Numerical Method for Evaluating IGBT Losses Last Update : 05-Mar-2011
