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MOC8106M: 6-Pin DIP High BVCEO Phototransistor Output Optocoupler
The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
| MOC8106M Datasheet |
Features
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|---|---|---|---|
| MOC8106SR2M | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.2352 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
TAPE REEL
| Line 1N/A
|
| MOC8106SM | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.2233 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
| MOC8106M | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.2113 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
BULK
| Line 1N/A
|
| MOC8106SR2VM | Full Production ROHS Compliant as of 27-Feb-2006 China RoHS | $0.2591 | MDIP 6L
-
3.405 x 8.51 x 6.35mm,
TAPE REEL
| Line 1N/A
|
- MDIP 6L Drawing Last Update: Oct 2015
- 6PW, Packing Drawing Last Update: Jan 2016
- MDIP 6L Drawing Last Update: Oct 2015
- 6PW, Packing Drawing Last Update: Jan 2016
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