NDB6060L: N-Channel Logic Level Enhancement Mode Field Effect Transistor

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB6060L Datasheet

Features

48A, 60V. R_DS(ON) = 0.025Ω @ V_GS = 5V.
Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R_DS(ON).
TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
NDB6060L	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$1.2095	TO-263 2L (D2PAK) - 4.445 x 10.16 x 15.24mm, TAPE REEL TO-263 2L (D2PAK) Drawing Last Update: May 2016 TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016 TO263-2L, PACKING DRAWING Last Update: May 2013 TO263_TUBE PACKING DRAWING Last Update: Jun 2013	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2NDB6060L