NDP6060: N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP6060 Datasheet

Features

48A, 60V. R_DS(ON) = 0.025Ω@ V_GS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R_DS(ON).
TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
NDP6060	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$1.0003	TO-220 3L - 4.83 x 10.16 x 8.89mm, RAIL PDF TO-220 3L Drawing Last Update: Nov 2015 PDF TO220-3L, JEDEC VARIATION, PACKING DRAWING Last Update: Oct 2013 PDF TO Tube Packing Drawing Last Update: Sep 2015 PDF TO Vacuum Packing Drawing Last Update: Sep 2015	Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2NDP6060
NDP6060	0.7	0.6	55	150