NDS355N: N-Channel Logic Level Enhancement Mode Field Effect Transisitor

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

• 1.6A, 30V. R_DS(ON) = 0.125Ω @ V_GS= 4.5 V.
• Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
• High density cell design for extremely low R_DS(ON).
• Exceptional on-resistance and maximum DC current capability.
• Compact industry standard SOT-23 surface mount package.

Application Notes