NDT456P: P-Channel Enhancement Mode Field Effect Transistor

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook     computer power management, battery powered circuits, and DC motor control.

Features

• -7.5 A, -30 V
  R_DS(ON) = 0.030 Ω @ V_GS = -10 V
  R_DS(ON) = 0.045 Ω @ V_GS = -4.5 V
  
• High density cell design for extremely low R_DS(ON)
  
• High power and current handling capability in a widely used surface mount package
  

Application Notes