RFD14N05LSM: N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

Features

• 14A, 50V
• r_DS(ON)= 0.100Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, andTTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature
• TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

Application Notes