SGF5N150UF: Discrete, High Performance IGBT _ BDTIC a Leading Distributor in China

SGF5N150UF: Discrete, High Performance IGBT

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.

SGF5N150UF Datasheet

Features

High Speed Switching
Low Saturation Voltage : V _CE(sat) = 4.7 V @ I_C = 5A
High Input Impedance

**Ordering Code**
Product	Product & Eco Status	Unit Price/1K Order	Packing Method Convention	Package Marking Convention*
SGF5N150UFTU	Full Production ROHS Compliant as of 27-Feb-2006 China RoHS	$5.1203	TO-3PF 3L - 5.7 x 15.5 x 43.8mm, RAIL TO-3PF 3L Drawing Last Update: Jun 2016 TO3PF-3L, FULLPACK (AG), PACKING DRAWING Last Update: Jan 2014	Line 1$Y (Fairchild logo) Line 2G5N150UF Line 3&3 (3-Digit Date Code) &K

TO-3PF 3L Drawing Last Update: Jun 2016

TO3PF-3L, FULLPACK (AG), PACKING DRAWING Last Update: Jan 2014

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