BFP640

ParametricBFP640
VCEO  max4.0V
IC  max50.0mA
NF0.65dB
Gmax24.0dB
OIP326.5dBm
OP1dB13.0dBm
PackageSOT343
Sales Product NameBFP640
OPNBFP640H6327XTSA1
Product Statusactive and preferred
Package NamePG-SOT343-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • High gain low noise RF transistor
  • Provides outstanding performance for a wide range of wireless applications
  • Ideal for CDMA and WLAN applications
  • Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
  • High maximum stable gain :Gms = 24 dB at 1.8 GHz
  • Gold metallization for extra high reliability
  • 70 GHz fT-Silicon Germanium technology
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101
Data Sheet
TitleSizeDateVersion
BFP640,EN1.3 MB13 Mar 201502_00
Application Notes
TitleSizeDateVersion
AN082 - A Low-Cost, Two-Stage Low Noise Amplifier for 5 - 6 GHz Applications Using the Silicon-Germanium BFP640 Transistor1.2 MB08 Dec 2009
AN121 - A Low Noise Amplifier (LNA) for 1575 MHz Global Positioning Satellite (GPS) Applications using the Silicon-Germanium BFP640 Transistor. Rev. B.1.1 MB08 Dec 2009
AN130 - The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier1.1 MB08 Dec 2009
AN131 - A Low Cost Two Stage LNA for 5 to 6 GHz "802.11a" Applications using the SiGe BFP640997 KB08 Dec 2009
AN133 - Low Noise Amplifier for Satellite Digital Multimedia Broadcasting (DMB) Applications using the SiGe BFP640 Transistor1.1 MB13 Nov 2009
AN134 - Low-Current Low Noise Amplifier (LNA) for 1575 MHz Global Positioning Satellite (GPS) Applications using the SiGe BFP640 Transistor1 MB13 Nov 2009
AN135 - Low Noise Amplifier (LNA) for 2.3 - 2.5 GHz Applications using the SiGe BFP640 Transistor1 MB08 Dec 2009
AN136 - Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier using the Infineon BFP640 SiGe Transistor983 KB08 Dec 2009
AN138 - Dual-Band (L1 + L2) GPS Low Noise Amplifier using the SiGe BFP640 HBT RF Transistor998 KB08 Dec 2009
AN151 - Low Noise Amplifier (LNA) for 2.3 - 2.5 GHz Applications Using the SiGe BFP640 Transistor1.2 MB08 Dec 2009
TR141 - BFP640 WLAN LNA 5 6GHz1.1 MB18 Dec 2009
AN137 - Low Cost, 3 Volt, +12.5 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier using the Infineon BFP640 SiGe Transistor1 MB17 Feb 2010
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_13-55-00_MA000843522_PG-SOT343-4-2.pdf23 KB31 Oct 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Mentor - v1.0；EN2 KB13 May 201601_00
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Altium - v1.0；EN524 KB13 May 201601_00
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Cadence - v1.0；EN12 KB13 May 201601_00
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Eagle - v1.0；EN2 KB13 May 201601_00
PCB Footprints & Symbols - BFP640 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - V2.0.zip；EN241 KB07 Jan 201502_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN；EN940 KB26 Oct 201502_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 Dec 201502_00
Simulation Data
TitleSizeDateVersion
BFP640；EN661 KB02 Nov 201401_02
Package Data
TitleSizeDateVersion
PG-SOT343-4-2 | BFP640H6327XTSA1；EN571 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Mentor - v1.0；EN2 KB13 May 201601_00
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Altium - v1.0；EN524 KB13 May 201601_00
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Cadence - v1.0；EN12 KB13 May 201601_00
PCB Footprints and Symbols - BFP640 - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Eagle - v1.0；EN2 KB13 May 201601_00
PCB Footprints & Symbols - BFP640 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - V2.0.zip；EN241 KB07 Jan 201502_00
EN BFP640
AN082 - A Low-Cost, Two-Stage Low Noise Amplifier for 5 - 6 GHz Applications Using the Silicon-Germanium BFP640 Transistor BFP640F
AN121 - A Low Noise Amplifier (LNA) for 1575 MHz Global Positioning Satellite (GPS) Applications using the Silicon-Germanium BFP BFP640
AN130 - The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier BFP640
AN131 - A Low Cost Two Stage LNA for 5 to 6 GHz "802.11a" Applications using the SiGe BFP640 BFP640
AN133 - Low Noise Amplifier for Satellite Digital Multimedia Broadcasting (DMB) Applications using the SiGe BFP640 Transistor BFP640
AN134 - Low-Current Low Noise Amplifier (LNA) for 1575 MHz Global Positioning Satellite (GPS) Applications using the SiGe BFP640 BFP640
AN135 - Low Noise Amplifier (LNA) for 2.3 - 2.5 GHz Applications using the SiGe BFP640 Transistor BFP640
AN136 - Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier using the Infineon BFP640 SiGe Tra BFP640F
AN138 - Dual-Band (L1 + L2) GPS Low Noise Amplifier using the SiGe BFP640 HBT RF Transistor BFP640
AN151 - Low Noise Amplifier (LNA) for 2.3 - 2.5 GHz Applications Using the SiGe BFP640 Transistor BFP640
TR141 - BFP640 WLAN LNA 5 6GHz BFP640
AN137 - Low Cost, 3 Volt, +12.5 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier using the Infineon BFP640 SiGe T BFP640
MCDS_2013-08-29_13-55-00_MA000843522_PG-SOT343-4-2.pdf BFP640
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