BFP740ESD

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP740ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

As Low Noise Amplifier (LNA) in:

ParametricBFP740ESD
VCEO  max4.2V
IC  max35.0mA
NF0.6dB
Gmax27.0dB
OIP325.0dBm
OP1dB10.0dBm
PackageSOT343
Sales Product NameBFP740ESD
OPNBFP740ESDH6327XTSA1
Product Statusactive and preferred
Package NamePG-SOT343-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
  • 2 kV ESD robustness (HBM) due to integrated protection circuits
  • High maximum RF input power of 21 dBm
  • 0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 6 mA
  • 25.5 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 18.5 dB at 5.5 GHz, 25 mA
  • 24 dBm OIP3 typical at 5.5 GHz, 25 mA
  • Accurate SPICE GP model available to enable effective design in process (see chapter 6)
  • Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads
Target Applications:
  • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as mobile/portable TV, CATV, FM radio
  • 3G/4G UMTS/LTE mobile phone applications
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.As discrete active mixer, amplifier in VCOs and buffer amplifier
Data Sheet
TitleSizeDateVersion
BFP740ESD,EN1.5 MB08 Oct 201201_01
Application Notes
TitleSizeDateVersion
AN295 - BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application672 KB20 Feb 201301_00
AN219 - BFP740ESD with 2kV ESD Rat ing in 5–6GHz LNA application1.8 MB09 Jul 2010
Product Brief
TitleSizeDateVersion
Infineon-RF Transistors 7th Generation-PB-v01_00-CN；CN580 KB15 May 201601_01
Infineon-RF Transistors 7th Generation-PB-v01_00-EN；EN299 KB15 Jun 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-01-26_09-19-31_MA001351782_PG-SOT343-4-2.pdf；EN27 KB26 Jan 201601_00
MCDS_2016-01-22_02-58-15_MA000796202_PG-SOT343-4-2.pdf；EN27 KB22 Jan 201602_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Altium - v1.0；EN524 KB02 Jun 201601_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Mentor - v1.0；EN2 KB02 Jun 201601_00
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Eagle - v1.0；EN2 KB02 Jun 201601_00
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Cadence - v1.0；EN12 KB02 Jun 201601_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
PCB Footprints & Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip；EN251 KB07 Jan 201502_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-AN295-BFP740ESD-AWR-MWO-Apllication-Example-SM-v01_00-EN；EN478 KB26 Oct 201501_00
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN；EN940 KB26 Oct 201502_00
Infineon - BFP740ESD - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz - SimModel with symbol and footprint AWR MWO v1.0.zip；EN2.2 MB29 Apr 201601_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 Dec 201502_00
Simulation Data
TitleSizeDateVersion
BFP740ESD - New: Now ready for ADS and MWO184 KB08 Jan 2013
Simulation Tool
TitleSizeDateVersion
BFP740ESD mdif11 KB06 Mar 2012
Spice Model3 KB06 Mar 2012
Package Data
TitleSizeDateVersion
PG-SOT343-4-2 | BFP740ESDH6327XTSA1；EN580 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Altium - v1.0；EN524 KB02 Jun 201601_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Mentor - v1.0；EN2 KB02 Jun 201601_00
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Eagle - v1.0；EN2 KB02 Jun 201601_00
PCB Footprints and Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Cadence - v1.0；EN12 KB02 Jun 201601_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
PCB Footprints & Symbols - BFP740ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip；EN251 KB07 Jan 201502_00
EN BFP740ESD
AN295 - BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application BFP740ESD
AN219 - BFP740ESD with 2kV ESD Rat ing in 5–6GHz LNA application BFP740ESD
EN BFR740L3RH
CN BFP760
EN BFP740ESD
EN BFP740ESD
EN BFP740ESD
EN BFP780
EN BFQ790
BFP740ESD - New: Now ready for ADS and MWO BFP740ESD
BFP740ESD mdif BFP740ESD
Spice Model BFP740ESD
EN BFP740ESD
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH
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