BFR740L3RH

The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of 42 GHz and is suited for low voltage applications (VCEO,max = 4 V) from VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR740L3RH is housed in a very thin small leadless package ideal for modules.

As Low Noise Amplifier (LNA) in:

ParametricBFR740L3RH
VCEO  max4.0V
IC  max30.0mA
NF0.5dB
Gmax24.5dB
OIP325.0dBm
OP1dB11.0dBm
PackageTSLP-3-9
Sales Product NameBFR740L3RH
OPNBFR740L3RHE6327XTSA1
Product Statusactive and preferred
Package NamePG-TSLP-3
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size15000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at
  • 5.5 GHz, 3 V, 6 mA
  • High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V
  • Very thin small leadless package (height only 0.31 mm), hence ideal for modules with compact size and low profile height
  • Pb-free (RoHS compliant) and halogen-free package
  • Qualification report according to AEC-Q101 available
Target Applications:
  • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as mobile/portable TV, CATV, FM Radio
  • 3G/4G UMTS/LTE mobile phone applications
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
Data Sheet
TitleSizeDateVersion
BFR740L3RH,EN1.1 MB06 Jun 201602_01
Application Notes
TitleSizeDateVersion
AN112 - A Wideband, Feedback Low Noise Amplifier (LNA) for <200 MHz to 6GHz inclusive, using the Ultra Low Noise BFR740L3 RF Transistor in TSLP-3-4 Leadless Package. Rev. A.1.1 MB08 Dec 2009
AN113 - Dual-Band / Broadband Feedback Low Noise Amplifier (LNA) for < 2.4GHz to 6 GHz inclusive, using the Ultra Low Noise BFR740L3 Silicon-Germanium RF Transistor in TSLP-3-4 Leadless Package. Rev. A.1.2 MB08 Dec 2009
AN114 - Investigation of BFR740L3 Ultra Low Noise SiGe:C Transistor as 1.7 – 2.3 GHz “iBURST” Low Noise Amplifier1 MB08 Dec 2009
AN115 - Dual-Band, 3 Volt, 10mA Low Noise Amplifier for 2.4 – 2.5 & 4.9 – 6 GHz Bands using the Ultra Low Noise BFR740L3 Silicon-Germanium: Carbon RF Transistor in TSLP-3-4 Leadless Package. Rev. A.1.1 MB08 Dec 2009
AN116 - BFR740L3RH Ultra Low Noise SiGe:C RF Transistor as 2.7 Volt, 6mA, 2110 – 2170 MHz UMTS Low Noise Amplifier (LNA).1 MB08 Dec 2009
AN170 - BFR740L3RH in 5 - 6 GHz LNA Application743 KB24 Nov 2009
AN173 - BFR740L3RH in 2.4 - 2.5 GHz LNA Application752 KB24 Nov 2009
TR151 - BFR740L3RH Maximum RF Input Power1,014 KB18 Dec 2009
Product Brief
TitleSizeDateVersion
Infineon-RF Transistors 7th Generation-PB-v01_00-EN；EN299 KB15 Jun 201601_01
Infineon-RF Transistors 7th Generation-PB-v01_00-CN；CN580 KB15 May 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_10-57-22_MA000297270_PG-TSLP-3-9.pdf23 KB31 Oct 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zip；EN486 KB08 May 201501_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Mentor - v1.0；EN2 KB13 May 201601_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Eagle - v1.0；EN2 KB13 May 201601_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Cadence - v1.0；EN11 KB13 May 201601_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Altium - v1.0；EN456 KB13 May 201601_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN；EN940 KB26 Oct 201502_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 Dec 201502_00
Infineon-BFR740L3RH - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz - SimModel with symbol and footprint AWR MWO v1.0.zip；EN2.7 MB06 May 201601_00
Simulation Data
TitleSizeDateVersion
BFR740L3RH286 KB05 Dec 2012
Package Data
TitleSizeDateVersion
PG-TSLP-3-9 | BFR740L3RHE6327XTSA1；EN522 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zip；EN486 KB08 May 201501_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Mentor - v1.0；EN2 KB13 May 201601_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Eagle - v1.0；EN2 KB13 May 201601_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Cadence - v1.0；EN11 KB13 May 201601_00
PCB Footprints and Symbols - BFR740L3RH - Ultra Low Noise SiGeC Transistor for use up to 12 GHz - Altium - v1.0；EN456 KB13 May 201601_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
EN BFR740L3RH
AN112 - A Wideband, Feedback Low Noise Amplifier (LNA) for <200 MHz to 6GHz inclusive, using the Ultra Low Noise BFR740L3 RF Tra BFR740L3RH
AN113 - Dual-Band / Broadband Feedback Low Noise Amplifier (LNA) for < 2.4GHz to 6 GHz inclusive, using the Ultra Low Noise BFR7 BFR740L3RH
AN114 - Investigation of BFR740L3 Ultra Low Noise SiGe:C Transistor as 1.7 – 2.3 GHz “iBURST” Low Noise Amplifier BFR740L3RH
AN115 - Dual-Band, 3 Volt, 10mA Low Noise Amplifier for 2.4 – 2.5 & 4.9 – 6 GHz Bands using the Ultra Low Noise BFR740L3 Silicon BFR740L3RH
AN116 - BFR740L3RH Ultra Low Noise SiGe:C RF Transistor as 2.7 Volt, 6mA, 2110 – 2170 MHz UMTS Low Noise Amplifier (LNA). BFR740L3RH
AN170 - BFR740L3RH in 5 - 6 GHz LNA Application BFR740L3RH
AN173 - BFR740L3RH in 2.4 - 2.5 GHz LNA Application BFR740L3RH
TR151 - BFR740L3RH Maximum RF Input Power BFR740L3RH
CN BFP760
EN BFR740L3RH
MCDS_2013-08-29_10-57-22_MA000297270_PG-TSLP-3-9.pdf BFR740L3RH
EN BFP780
EN BFQ790
BFR740L3RH BFR740L3RH
EN BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH
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