Summary of Features:

• Increased blocking voltage capability to 680V
• High Current Density
• Low inductive design
• Low Switching Losses
• Trench IGBT 3
• T(vj op) = 175°C (max 10 sec)
• T(vj op) = 150°C (continuously)
• Current rating up to 600A
• V(CEsat) improved by 100mV (compared to standard HP2)
• 2.5 kV AC 1min Insulation
• Direct Cooled Base Plate
• High Power Density
• Integrated NTC temperature sensor
• Isolated Base Plate
• Copper Base Plate
• RoHS compilant

Benefits:

• „Cost efficient system approach
• „„High efficiency due to low power losses
• „„High reliability
• „„Compact design
• „„HybridKIT 2 reference design available
• Very High Power Density

Benefits:

• „Cost efficient system approach
• „„High efficiency due to low power losses
• „„High reliability
• „„Compact design
• „„HybridKIT 2 reference design available
• Very High Power Density

Diagrams