IDW32G65C5B infineon _ BDTIC a Leading Distributor in China

IDW32G65C5B

CoolSiC™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Parametric	IDW32G65C5B
VDC min	650.0V
IF max	16.0A
VF	1.5V
QC	23.0nC
Package	TO-247
I(FSM) max	95.0A
IR	0.8µA
Ptot max	188.0W
RthJC	1.2K/W

Sales Product Name	IDW32G65C5B
OPN	IDW32G65C5BXKSA1
Product Status	active and preferred
Package Name	PG-TO247-3
Completely lead free	yes
Halogen free	yes
RoHS compliant	yes
Packing Size	240
Packing Type	TUBE

Summary of Features:

V br at 650V
Improved Figure of Merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating

Benefits:

Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability

Target Applications:

Telecom/Server SMPS
Solar
UPS
PC Power
LED/LCD TV
Motor Drives
HID Lighting

Data Sheet

Title	Size	Date	Version
Infineon-IDW32G65C5B-DS-v02_00-EN,EN	730 KB	30 Jun 2015	02_00

Product Brochure

Title	Size	Date	Version
CoolSiC™ technology；EN	2.1 MB	09 May 2016	01_00

Product Overview

Title	Size	Date	Version
Selection Guide 600V 650V CoolSiC™ Schottky Diodes；EN	2 MB	14 Mar 2014	01_00

Application Notes

Title	Size	Date	Version
Application Note CoolSiC™ Schottky Diodes Design Rules；EN	791 KB	16 Jun 2014	01_00
Application Note Evaluation Board 300W SMPS；EN	3 MB	09 Feb 2016	01_02

Product Brief

Title	Size	Date	Version
Product Brief 650V CoolSiC™ Schottky Diodes Generation 5；EN	785 KB	24 Mar 2013	01_00

Article

Title	Size	Date	Version
New Sic Thin-Wafer Technology Paving the way of Schottky Diodes With Improved Performance and Reliability	339 KB	26 Sep 2012
Article 600V 650V 1200V CoolSiC™ Schottky Diodes PEE Magazine；EN	1.6 MB	01 Sep 2012	01_00
Article CoolSiC™ Schottky Diodes Generation 5 Semiconductor Network - Korean；KO	1.4 MB	10 Sep 2014	01_00

Application Brochure

Title	Size	Date	Version
Application Brochure 3D Printer；EN	340 KB	23 Oct 2015	01_00

Product Selection Guide

Title	Size	Date	Version
NEW! Power Management Selection Guide 2016；EN	4.7 MB	22 Feb 2016	00_00
Selection Guide PFC Power Factor Correction；EN	1.9 MB	03 May 2013	01_00

Product Catalogue

Title	Size	Date	Version
Short Form Catalog - May 2016；EN	4.4 MB	09 May 2016	01_00

Whitepaper

Title	Size	Date	Version
White Paper CoolSiC™ Schottky Diodes Generation 5 600V 650V 1200V Reliability Considerations；EN	601 KB	01 Mar 2013	01_00
White Paper 600V 650V 1200V CoolSiC™ Schottky Diodes Generation 5 SMPS Circuit Designs；EN	105 KB	07 May 2013	01_00

Material Content SheetInfo

Title	Size	Date	Version
MCDS_2015-08-14_03-55-12_MA001225320_PG-TO247-3-41.pdf；EN	28 KB	14 Aug 2015	01_00

Package Data

Title	Size	Date	Version
PG-TO247-3-41 \| IDW32G65C5BXKSA1；EN	471 KB	11 Apr 2016	01_00