IPD30N10S3L-34

ParametricIPD30N10S3L-34
RDS (on) (@10V)  max31.0mΩ
RDS (on)  max31.0mΩ
RDS (on) (@4.5V)  max41.8mΩ
QG24.0nC
VDS  max100.0V
ID  max30.0A
RthJC  max2.6K/W
Ptot  max57.0W
IDpuls  max120.0A
VGS(th)  min  max1.2V  2.4V
Sales Product NameIPD30N10S3L-34
OPNIPD30N10S3L34ATMA1
Product Statusactive and preferred
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • highest current capability 180A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages
Target Applications:
  • 48V inverter
  • 48V DC/DC
  • HID lighting
Data Sheet
TitleSizeDateVersion
IPD30N10S3L-34_DS_1_1,EN176 KB06 Oct 201101_01
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-12-39_MA000391968_PG-TO252-3-11.pdf23 KB31 Oct 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS-T_100V_PSpice124 KB31 Jan 2008
EN IPD30N10S3L-34
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-12-39_MA000391968_PG-TO252-3-11.pdf IPD30N10S3L-34
OptiMOS-T_100V_PSpice IPP50N10S3L-16