IRF6717M

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance.

ParametricIRF6717M
PackageDirectFET MX
VDS  max25.0V
RDS (on) (@10V)  max1.25mΩ
RDS (on)  max1.25mΩ
RDS (on) (@4.5V)  max2.1mΩ
PolarityN
ID (@ TA=70°C)  max30.0A
ID (@ TA=25°C)  max38.0A
ID (@ TC=25°C)  max220.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max96.0W
QG46.0nC
MountingSMD
RthJC  max1.3K/W
VGS  max20.0V
Moisture Sensitivity Level1
Qgd14.0nC
Tj  max150.0°C
Sales Product NameIRF6717M
OPNIRF6717MTR1PBF
Product Statusdiscontinued
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
OPNIRF6717MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Target Applications:
  • eFuse
  • HotSwap
  • MultiPhase SyncFET
  • ORing
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6717M,EN218 KB10 Oct 2008
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6717MPBFEN2 KB10 Oct 2008
Saber Model - IRF6717MPBFEN2 KB10 Oct 2008
EN IRF6717M
EN IDV20E65D1
EN IRF6717M
EN IRF6717M