PTFB213208FV V2

High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2170 MHz

ParametricPTFB213208FV V2
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB320.0W
Supply Voltage28.0V
Pout50.0W
Gain17.0dB
Test SignalWCDMA
Sales Product NamePTFB213208FV V2
OPN
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size
Packing Type
Summary of Features:
  • Broadband internal matching
  • Wide video bandwidth
  • Typical pulsed CW performance, 2140 MHz, 28 V (combined outputs) - Output power @ P1dB = 343 W - Efficiency = 54% - Gain = 16.5 dB
  • Typical single-carrier WCDMA performance, 2140 MHz, 28 V - Output power = 50 dBm avg - Gain = 17 dB,Efficiency = 32%
  • Capable of handling 10:1 VSWR @ 28 V, 320 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package: H-37275G-6/2, earless
Data Sheet
TitleSizeDateVersion
Infineon-PTFB213208FV-DS-v03_00-EN,EN217 KB29 Oct 201503_00
Development Tools
TitleSizeDateVersion
PTFB 213208FSV RD126 KB11 Dec 201202_01
EN PTFB213208FV+V2
PTFB 213208FSV RD PTFB213208SV+V2