PTFC262157SH V1 R250

Thermally-Enhanced High Power RF LDMOS FET, 200 W, 28 V, 2620 – 2690 MHz Designed for Doherty, optimized for peak side

ParametricPTFC262157SH V1 R250
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max2620.0MHz  2690.0MHz
P1dB200.0W
Supply Voltage28.0V
Pout50.0W
Gain19.5dB
Test SignalWCDMA
Sales Product NamePTFC262157SH V1 R250
OPNPTFC262157SHV1R250XTMA1
Product Statusactive and preferred
Package NameH-37288G-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR @ 0.01% CCDR  - 50 W output power at P1dB  - 29% efficiency  - 19.5 dB gain  - –31.5 dBc ACPR at 2690 MHz
  • Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS-compliant
Data Sheet
TitleSizeDateVersion
PTFC 262157SH Data Sheet163 KB14 Apr 201403_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-37288G-4/2-1 | PTFC262157SHV1R250XTMA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFC262157SH RD269 KB16 Feb 201201_00
PTFC 262157SH Data Sheet PTFC262157SH+V1+R250
EN where-to-buy
EN PTFC262157SH+V1+R250
PTFC262157SH RD PTFC262157SH+V1+R250