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The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate.

The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhanced Low Dose Rate Sensitivity (ELDERS) product manufacturing flow.

One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to single event latch-up and the capability of highly reliable performance in a radiation environment.

The high gain-bandwidth product and low noise figure of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the NPN and PNP transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility.

Key Features

• Electrically screened to SMD # 5962-07218
• QML qualified per MIL-PRF-38535 requirements
• Radiation tolerance
  • High dose rate (50-300rad(Si)/s): 100krad(Si)
  • Low dose rate (0.01rad(Si)/s): 50krad(Si)*
  • SEL immune: Bonded wafer dielectric isolation
• NPN gain bandwidth product (FT: 8GHz (typ)
• NPN current gain (hFE): 130 (typ)
• NPN early voltage (VA): 50V (typ)
• PNP gain bandwidth product (FT): 5.5GHz (typ)
• PNP current gain (hFE): 60 (typ)
• PNP early voltage (VA): 20V (typ)
• Noise figure (50Ω) at 1GHz: 3.5dB (typ)
• Collector-to-collector leakage: <1pA (typ)
• Complete isolation between transistors* Limit established by characterization

Applications

• High frequency amplifiers and mixers
• High frequency converters
• Synchronous detector