AFT09MS007N: 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor

PLD-1.5W Image
特性
  • Characterized for Operation from 136 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7-inch Reel.
  • This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
特性
  • Output Stage VHF Band Handheld Radio
  • Output Stage UHF Band Handheld Radio
  • Output Stage for 700-800 MHz Handheld Radio
Data Sheets (1)
Name/DescriptionModified Date
AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 1) PDF (1.4 MB) AFT09MS007N21 Apr 2014
Application Notes (2)
Name/DescriptionModified Date
How to Extend Bandwidth AFT09MS007N Application Note (REV 0) PDF (949.9 kB) AN485926 Aug 2014
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Fact Sheets (1)
Name/DescriptionModified Date
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet (REV 2) PDF (364.6 kB) RFLANDMBFS20 Mar 2014
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins (REV A) PDF (55.3 kB) 98ASA00476D15 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT09MS007NT1Active1.89417.538.67.37.3 @ CW1-Tone15.2 @ 870711.1UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
PLD-1.5W98ASA00476DMPQ - 1000 REELPOQ - 1000 BOXActiveAFT09MS007NT1AFT09MS007NT1.pdf3260
AFT09MS007NT1 136-941 MHz, 7 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet aft09ms007n
How to Extend Bandwidth AFT09MS007N Application Note aft09ms007n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet mrf1570n
RF Products Selector Guide MMT20303H
AFT09MS007N 350-470 MHz PCB DXF file AFT09MS007N
AFT09MS007N 450-520 MHz PCB DXF file AFT09MS007N
AFT09MS007N 760-870 MHz PCB DXF file AFT09MS007N
AFT09MS007N 870 MHz Narrowband PCB DXF file AFT09MS007N
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins aft09ms015n
AFT09MS007NT1.pdf AFT09MS007N