AFT20P060-4N: 1805-2170 MHz 6.3 W Avg., 28 V Airfast® RF Power LDMOS Transistors
OM-780-4L, OM-780G-4L Package Image
特性
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT20P060-4NR3, AFT20P060-4GNR3 1805-2170 MHz, 6.3 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... (REV 1) PDF (565.9 kB) AFT20P060-4N | 01 Dec 2013 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D | 22 Mar 2016 |
| 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D | 22 Mar 2016 |
Printed Circuit Boards
- AFT20P060-4N PCB DXF file (REV 0) ZIP AFT20P060_4N_PCB 1/11/2013
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT20P060-4NR3 | Active | 1805 | 2170 | 28 | 47.8 | 60 | 6.3 @ AVG | W-CDMA | 18.9 @ 2170 | 20 | 0.56 | I/O | AB | LDMOS |
| AFT20P060-4GNR3 | Active | 1805 | 2170 | 28 | 47.8 | 60 | 6.3 @ AVG | W-CDMA | 18.9 @ 2170 | 20 | 0.56 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM780-4 straight Cu | 98ASA10833D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT20P060-4NR3 | AFT20P060-4NR3.pdf |   | 3 | 260 |
| OM780-4 Gull Cu | 98ASA10834D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT20P060-4GNR3 | AFT20P060-4GNR3.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- AFT20P060-4N PCB DXF file AFT20P060-4N
- 98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
- AFT20P060-4NR3.pdf AFT20P060-4N
- 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
- AFT20P060-4GNR3.pdf AFT20P060-4N
