AFV141KH: 1000 W Peak over 1200-1400 MHz, 50 V RF Power LDMOS Transistor

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image
特性
  • Internally Input and Output Matched for Broadband Operation and Ease of Use
  • Device Can Be Used Single-Ended, Push-Pull, or in a Quadrature Configuration
  • Qualified up to a Maximum of 50 VDD Operation
  • High Ruggedness, Handles > 20:1 VSWR
  • Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
特性
  • Commercial L-Band Radar Systems
Data Sheets (1)
Name/DescriptionModified Date
AFV141KH 1000 W Peak, 1200-1400 MHz, 50 V Data Sheet (REV 0) PDF (439.1 kB) AFV141KH20 Apr 2016
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN190824 Feb 2011
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (3)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins (REV B) PDF (48.5 kB) 98ASA00459D29 Feb 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C23 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFV141KHR5Active12001400506010001000 @ PeakPulse17.7 @ 140052.10.018UnmatchedABLDMOS
AFV141KGSR5Active12001400506010001000 @ PeakPulse17.7 @ 140052.10.018UnmatchedABLDMOS
AFV141KHSR5Active12001400506010001000 @ PeakPulse17.7 @ 140052.10.018UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-1230-4S GULL98ASA00459DMPQ - 50 REELPOQ - 50 BOXActiveAFV141KGSR5AFV141KGSR5.pdf260
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 BOXActiveAFV141KHR5AFV141KHR5.pdf260
NI-1230S98ARB18247CMPQ - 50 REELPOQ - 50 BOXActiveAFV141KHSR5AFV141KHSR5.pdf260
AFV141KH 1000 W Peak, 1200-1400 MHz, 50 V Data Sheet afv141kh
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFV141KH 1400 MHz Narrrow Band PCB DXF file AFV141KH
98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins mrfe6vp61k25h
AFV141KGSR5.pdf AFV141KH
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
AFV141KHR5.pdf AFV141KH
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
AFV141KHSR5.pdf AFV141KH