The BGU8M1 is a Low Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external matching inductor.
The BGU8M1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 13 dB gain at a noise figure of 0.8 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.
The BGU8M1 is optimized for 1805 MHz to 2200 MHz.
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SiGe:C Low Noise Amplifier MMIC for LTE (REV 2.0) PDF (127.0 kB) BGU8M1 | 04 Apr 2016 |
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BGU8M1 LTE LNA evaluation board (REV 2.0) PDF (914.0 kB) AN11513 | 12 Jan 2016 |
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XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm (REV 1.0) PDF (185.0 kB) SOT1232 | 08 Feb 2016 |
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Solderlayout SOT1232 (REV 1.0) PDF (32.0 kB) SOLDERLAYOU_SOT1232 | 16 May 2014 |
Product | Status | Package version | @VCC [min] (V) | @VCC [max] (V) | @ICC [typ] (mA) | Gp [typ] (dB) | NF [typ] (dB) | Pi(1dB) [min] (dBm) | IP3i [min] (dBm) | IP3i [typ] (dBm) | @VCC (V) | Pi(1dB) [typ] (dBm) | @f (MHz) |
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BGU8M1 | Active | SOT1232 | 1.5 | 3.1 | 13.5 | 0.8 | -2 | 1843 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | MSL | MSL LF |
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BGU8M1 | SOT1232 | Solderlayou_SOT1232 | Reel 7" Q1/T1 | Active | BGU8M1X (9340 685 33115) | E | BGU8M1 | Always Pb-free | 1 | 1 |