数据手册DataSheet 下载BLA6H0912L-1000 LDMOS航空电子功率晶体管.pdf

1000 W LDMOS脉冲功率晶体管,设计用于1030 MHz范围的TCAS和IFF应用。

产品特点
  • 方便的功率控制
  • 集成ESD保护
  • 高度灵活的脉冲格式
  • 极佳的强度
  • 高效率
  • 极佳的热稳定性
  • 主要用于宽带操作(960 MHz至1215 MHz)
  • 内部匹配,便于使用
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • 1000 W LDMOS脉冲功率晶体管,设计用于1030 MHz至1090 MHz频率范围内的TCAS和IFF应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLA6H0912L-1000(SOT539A)sot539a_poBlister pack开发Standard MarkingBLA6H0912L-1000U( 9340 674 02112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLA6H0912L-1000BLA6H0912L-1000UAlways Pb-free
产品技术资料
文档标题类型分类格式更新日期
BLA6H0912L-1000_0912LS-1000 (中文):LDMOS avionics power transistorData sheetpdf2014-02-10
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
high_power_rf_ldmos_transistors_for_avionics_applications:High Power RF LDMOS Transistors for Avionics ApplicationsOther typepdf2009-01-13
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
NXP_RFpower_Lib_V08p0:RF Power Model Library for MicroWave OfficeSimulation modelzip2012-06-08
NXP_RFpower_Library_Manual_MWO_20120420:RF Power Model Library Manual and Installation Instructions for MicroWave OfficeSimulation modelpdf2012-05-22
NXP_RFPower_Simulation_Example:RF Power Simulation Example for MicroWave OfficeSimulation modelzip2012-06-11
BLA6H0912L-1000_ADS-2009_Model:BLA6H0912L-1000 ADS-2009 ModelSimulation modelzip2013-10-28
BLA6H0912L-1000_ADS-2011_Model:BLA6H0912L-1000 ADS-2011 ModelSimulation modelzip2013-10-28
SOT539A_135:CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112:CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot539a_po:flanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
LDMOS avionics power transistor BLA6H0912L_S_1000
LDMOS avionics power transistor BLA6H0912L_S_1000
LDMOS avionics power transistor BLA6H0912L_S_1000
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
High Power RF LDMOS Transistors for Avionics Applications avionics_ldmos_transistors
NXP's RF Manual 18th edition OL2300NHN
RF Power Model Library for MicroWave Office CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLA6H0912L-1000 ADS-2009 Model BLA6H0912L_S_1000
BLA6H0912L-1000 ADS-2011 Model BLA6H0912L_S_1000
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P