数据手册DataSheet 下载:BLD6G22L(S)-50 W-CDMA 2110 MHz至2170 MHz的全集成式Doherty晶体管.pdf
BLD6G22L-50和BLD22LS-50结合全集成式Doherty解决方案,采用恩智浦最先进的GEN6 LDMOS技术。该器件非常适合频率范围为2110 MHz至2170 MHz的CDMA基站应用。主器件和峰值器件、输入分离器和输出混合器集成在单个封装中。该封装包括一个栅极和漏极引脚以及两个额外引脚,其中一个用于峰值放大器偏置而另一个未连接。对于常规AB类晶体管,其只需正确的输入/输出匹配和偏置设置。
订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
BLD6G22L-50 | CDFM4 (SOT1130A) | sot1130a_po | Bulk Pack | 激活 | null | BLD6G22L-50,112( 9340 635 11112 ) | |
BLD6G22LS-50 | CDFM4 (SOT1130B) | sot1130b_po | Bulk Pack | 激活 | null | BLD6G22LS-50,112( 9340 635 12112 ) |
订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF(小时) | 潮湿敏感度等级 | MSL LF |
BLD6G22L-50 | BLD6G22L-50,112 | Always Pb-free | NA | NA | ||||
BLD6G22LS-50 | BLD6G22LS-50,112 | Always Pb-free | NA | NA |
文档标题 | 类型分类 | 格式 | 更新日期 |
BLD6G22L-50_BLD6G22LS-50 (中文):W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor | Data sheet | 2010-08-17 | |
AN10896:Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
75017347:Enabling the Mobile Experience | Brochure | 2013-02-05 | |
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
75017565:NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
NXP_RFpower_Lib_V08p0:RF Power Model Library for MicroWave Office | Simulation model | zip | 2012-06-08 |
NXP_RFpower_Library_Manual_MWO_20120420:RF Power Model Library Manual and Installation Instructions for MicroWave Office | Simulation model | 2012-05-22 | |
NXP_RFPower_Simulation_Example:RF Power Simulation Example for MicroWave Office | Simulation model | zip | 2012-06-11 |
sot1130a_po:flanged ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 | |
sot1130b_po:earless flanged ceramic package; 4 leads | Outline drawing | 2010-01-20 |