数据手册DataSheet 下载BLF6G15L-40RN 功率LDMOS晶体管.pdf

40 LDMOS功率晶体管,适用于1450 MHz至1550 MHz频率范围的基站应用。

产品特点
  • 方便的功率控制
  • 集成ESD保护
  • 增强的强度
  • 高效率
  • 极佳的热稳定性
  • 主要用于宽带操作(1450 MHz至1550 MHz)
  • 内部匹配以方便使用
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • W-CDMA基站RF功率放大器
  • 1450 MHz 至1550 MHz频率范围内的多载波应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF6G15L-40RNCDFM2 (SOT1135A)sot1135a_poReel Pack, SMD, 13" Q1/T1激活Standard MarkingBLF6G15L-40RN,118( 9340 661 95118 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF6G15L-40RNBLF6G15L-40RN,118Always Pb-freeNANA
BLF6G15L-40RNBLF6G15L-40RN,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF6G15L-40RN_6G15LS-40RN (中文):Power LDMOS transistorData sheetpdf2012-05-14
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF6G15L-40RN_6G15LS-40RN_Data-sheet:PCB Design BLF6G15L(S)-40RN (Data sheet)Design supportzip2012-05-14
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
sot1135a_po:flanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2010-01-20
Power LDMOS transistor BLF6G15L_S_40RN
Power LDMOS transistor BLF6G15L_S_40RN
Power LDMOS transistor BLF6G15L_S_40RN
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
PCB Design BLF6G15L(S)-40RN (Data sheet) BLF6G15L_S_40RN
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
flanged ceramic package; 2 mounting holes; 2 leads BLS6G2735L_S_30