数据手册DataSheet 下载BLF6G20-110 功率LDMOS晶体管.pdf

110 W LDMOS功率晶体管,适用于1800 MHz至2000 MHz频率范围的基站应用。

产品特点
  • 方便的功率控制
  • 集成ESD保护
  • 极佳的强度
  • 高效率
  • 极佳的热稳定性
  • 主要用于宽带操作(1800 MHz至2000 MHz)
  • 内部匹配以方便使用
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • GSM、GSM EDGE、W-CDMA和CDMA基站RF功率放大器
  • 1800 MHz 至2000 MHz频率范围内的多载波应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF6G20-110(SOT502A)sot502a_poBlister pack激活Standard MarkingBLF6G20-110,112( 9340 611 28112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF6G20-110BLF6G20-110,112Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF6G20-110_BLF6G20LS-110 (中文):Power LDMOS transistorData sheetpdf2009-01-13
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
SOT502A_112:CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
SOT502A_135:Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
sot502a_po:flanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
Power LDMOS transistor BLF6G20_LS_110
Power LDMOS transistor BLF6G20_LS_110
Power LDMOS transistor BLF6G20_LS_110
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105