数据手册DataSheet 下载BLF7G20L-200 功率LDMOS晶体管.pdf

200 W LDMOS功率晶体管,适合1805 MHz至1990 MHz频率范围的基站应用。

产品特点
  • 针对低内存占用量设计,提供出色的预失真性能
  • 内部匹配,便于使用
  • 出色的耐用性
  • 集成ESD保护
  • 高效率
  • 设计用于宽带操作(1805 MHz至1990 MHz)
  • 低Rth,提供极佳的热稳定性
  • 更低的输出电容,可增强Doherty应用中的性能
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • 适合W-CDMA基站和多载波应用的RF功率放大器
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF7G20L-200(SOT502A)sot502a_poBlister pack激活Standard MarkingBLF7G20L-200,112( 9340 645 83112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF7G20L-200BLF7G20L-200,112Always Pb-freeNANA
BLF7G20L-200BLF7G20L-200,118Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLF7G20L-200_7G20LS-200 (中文):Power LDMOS transistorData sheetpdf2011-07-22
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
AN10921:BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power amplifierApplication notepdf2010-07-16
AN10944:1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200Application notepdf2013-10-28
75017347:Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF7G20L-200_7G20LS-200_AN10944:PCB Design BLF7G20L(S)-200 (AN10944)Design supportzip2012-02-24
PCB_Design_BLF7G20L-200_7G20LS-200_AN10921:PCB Design BLF7G20L(S)-200 (AN10921)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLF7G20-200_ADS-2009_Model:BLF7G20-200 ADS-2009 ModelSimulation modelzip2013-06-25
NXP_RFpower_Lib_V08p0:RF Power Model Library for MicroWave OfficeSimulation modelzip2012-06-08
NXP_RFpower_Library_Manual_MWO_20120420:RF Power Model Library Manual and Installation Instructions for MicroWave OfficeSimulation modelpdf2012-05-22
NXP_RFPower_Simulation_Example:RF Power Simulation Example for MicroWave OfficeSimulation modelzip2012-06-11
BLF7G20L-200_ADS-2011_Model:BLF7G20L-200 ADS-2011 ModelSimulation modelzip2014-04-11
SOT502A_112:CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
SOT502A_135:Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
sot502a_po:flanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
Power LDMOS transistor BLF7G20L_S_200
Power LDMOS transistor BLF7G20L_S_200
Power LDMOS transistor BLF7G20L_S_200
Mounting and Soldering of RF transistors aerospace_defense
BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power amplifier BLF7G20L_S_200
1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 BLF7G20L_S_200
Enabling the Mobile Experience rf
PCB Design BLF7G20L(S)-200 (AN10944) BLF7G20L_S_200
PCB Design BLF7G20L(S)-200 (AN10921) BLF7G20L_S_200
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
BLF7G20-200 ADS-2009 Model BLF7G20L_S_200
RF Power Model Library for MicroWave Office CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
BLF7G20L-200 ADS-2011 Model BLF7G20L_S_200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105