数据手册DataSheet 下载：BLF7G20L-90P 功率LDMOS晶体管.pdf
1800 MHz至2000 MHz频率范围基站应用90 W LDMOS功率晶体管，主要用于1427 MHz至1525 MHz、1805 MHz至1880 MHz和2110 MHz至2170 MHz的操作。
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLF7G20L-90P | CDFM4 (SOT1121A) | sot1121a_po | Reel Pack, SMD, 13" Q1/T1 | 激活 | Standard Marking | BLF7G20L-90P,118( 9340 640 87118 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLF7G20L-90P | BLF7G20L-90P,118 |   | Always Pb-free | NA | NA | |||
| BLF7G20L-90P | BLF7G20L-90P,112 | | Always Pb-free | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLF7G20L-90P_7G20LS-90P (中文)：Power LDMOS transistor | Data sheet | 2011-10-20 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| AN10951：1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P | Application note | 2010-12-10 | |
| 75017347：Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLF7G20L-90P_7G20LS-90P_Data-sheet：PCB Design BLF7G20L(S)-90P (Data sheet) | Design support | zip | 2012-02-24 |
| PCB_Design_BLF7G20L-90P_7G20LS-90P_BLF7G21L-160P_7G21LS-160P_AN10951：PCB Design BLF7G20L(S)-90P BLF7G21L(S)-160P (AN10951) | Design support | zip | 2012-02-24 |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| BLF7G20-90P_ADS-2009_Model：BLF7G20-90P ADS-2009 Model | Simulation model | zip | 2013-02-28 |
| NXP_RFpower_Lib_V08p0：RF Power Model Library for MicroWave Office | Simulation model | zip | 2012-06-08 |
| NXP_RFpower_Library_Manual_MWO_20120420：RF Power Model Library Manual and Installation Instructions for MicroWave Office | Simulation model | 2012-05-22 | |
| NXP_RFPower_Simulation_Example：RF Power Simulation Example for MicroWave Office | Simulation model | zip | 2012-06-11 |
| BLF7G20-90P_ADS-2011_Model：BLF7G20-90P ADS-2011 Model | Simulation model | zip | 2014-04-11 |
| sot1121a_po：flanged LDMOST ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 |
- Power LDMOS transistor BLF7G20L_S_90P
- Power LDMOS transistor BLF7G20L_S_90P
- Power LDMOS transistor BLF7G20L_S_90P
- Mounting and Soldering of RF transistors aerospace_defense
- 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P BLF7G21L_S_160P
- Enabling the Mobile Experience rf
- PCB Design BLF7G20L(S)-90P (Data sheet) BLF7G20L_S_90P
- PCB Design BLF7G20L(S)-90P BLF7G21L(S)-160P (AN10951) BLF7G21L_S_160P
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- BLF7G20-90P ADS-2009 Model BLF7G20L_S_90P
- RF Power Model Library for MicroWave Office CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- BLF7G20-90P ADS-2011 Model BLF7G20L_S_90P
- flanged LDMOST ceramic package; 2 mounting holes; 4 leads BLF884P_S
