数据手册DataSheet 下载：BLF7G22L-200 功率LDMOS晶体管.pdf
200 W LDMOS功率晶体管，适合2110 MHz至2170 MHz频率范围内的基站应用。
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLF7G22L-200 | (SOT502A) | sot502a_po | Reel Pack, SMD, 13" Q1/T1 | 激活 | Standard Marking | BLF7G22L-200,118( 9340 644 58118 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLF7G22L-200 | BLF7G22L-200,118 |   | Always Pb-free | NA | NA | |||
| BLF7G22L-200 | BLF7G22L-200,112 | | Always Pb-free | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLF7G22L-200_7G22LS-200 (中文)：Power LDMOS transistor | Data sheet | 2011-07-22 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| 75017347：Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLF7G22L-200_7G22LS-200_Data-sheet：PCB Design BLF7G22L(S)-200 (Data sheet) | Design support | zip | 2012-10-04 |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| NXP_RFpower_Lib_V08p0：RF Power Model Library for MicroWave Office | Simulation model | zip | 2012-06-08 |
| NXP_RFpower_Library_Manual_MWO_20120420：RF Power Model Library Manual and Installation Instructions for MicroWave Office | Simulation model | 2012-05-22 | |
| BLF7G22LS-200_ADS-2009_Model：BLF7G22LS-200 ADS-2009 Model | Simulation model | zip | 2013-06-25 |
| NXP_RFPower_Simulation_Example：RF Power Simulation Example for MicroWave Office | Simulation model | zip | 2012-06-11 |
| BLF7G22LS-200_ADS-2011_Model：BLF7G22LS-200 ADS-2011 Model | Simulation model | zip | 2014-04-24 |
| BLF7G22LS-200_ADS-2012_Model：BLF7G22LS-200 ADS-2012 Model | Simulation model | zip | 2014-05-02 |
| SOT502A_112：CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-11-30 | |
| SOT502A_135：Tape reel SMD; standard product orientation 12NC ending 135 | Packing | 2012-12-03 | |
| sot502a_po：flanged ceramic package; 2 mounting holes; 2 leads | Outline drawing | 2009-10-08 |
- Power LDMOS transistor BLF7G22L_S_200
- Power LDMOS transistor BLF7G22L_S_200
- Power LDMOS transistor BLF7G22L_S_200
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- PCB Design BLF7G22L(S)-200 (Data sheet) BLF7G22L_S_200
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- RF Power Model Library for MicroWave Office CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
- BLF7G22LS-200 ADS-2009 Model BLF7G22L_S_200
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- BLF7G22LS-200 ADS-2011 Model BLF7G22L_S_200
- BLF7G22LS-200 ADS-2012 Model BLF7G22L_S_200
- CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
- Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
- flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
