数据手册DataSheet 下载BLL6H1214LS-500 LDMOS L波段雷达功率晶体管.pdf

500 W LDMOS功率晶体管主要用于1.2 GHz至1.4 GHz范围的L波段雷达应用。

产品特点
  • 方便的功率控制
  • 集成ESD保护
  • 高度灵活的脉冲格式
  • 极佳的强度
  • 高效率
  • 极佳的热稳定性
  • 主要用于宽带操作(1.2 GHz至1.4 GHz)
  • 内部匹配以方便使用
  • 符合有害物质限制的Directive 2002/95/EC
产品应用
  • 1.2 GHz至1.4 GHz范围内的雷达应用
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLL6H1214LS-500(SOT539B)sot539b_poBulk Pack激活Standard MarkingBLL6H1214LS-500,11( 9340 660 65112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLL6H1214LS-500BLL6H1214LS-500,11Always Pb-freeNANA
产品技术资料
文档标题类型分类格式更新日期
BLL6H1214-500_1214LS-500 (中文):LDMOS L-band radar power transistorData sheetpdf2013-08-05
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLL6H1214-500_1214LS-500_Data-sheet:PCB Design BLL6H1214(LS)-500 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
ldmos_transistors_in_power_microwave_applications:LDMOS Transistors in Power Microwave ApplicationsOther typepdf2009-01-13
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
BLL6H1214-500_ADS-2009_Model:BLL6H1214-500 ADS-2009 ModelSimulation modelzip2013-02-28
BLL6H1214-500_ADS-2011_Model:BLL6H1214-500 ADS-2011 ModelSimulation modelzip2014-04-11
sot539b_po:earless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
LDMOS L-band radar power transistor BLL6H1214_LS_500
LDMOS L-band radar power transistor BLL6H1214_LS_500
LDMOS L-band radar power transistor BLL6H1214_LS_500
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLL6H1214(LS)-500 (Data sheet) BLL6H1214_LS_500
Fatigue in aluminum bond wires gan_devices
LDMOS Transistors in Power Microwave Applications BLS6G2731_S_120
NXP's RF Manual 18th edition OL2300NHN
BLL6H1214-500 ADS-2009 Model BLL6H1214_LS_500
BLL6H1214-500 ADS-2011 Model BLL6H1214_LS_500
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P