数据手册DataSheet 下载:BLM7G1822S-80AB LDMOS 2-stage power MMIC.pdf
The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using
NXP’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited
for small cell final in Doherty configuration, or as general purpose driver in the frequency
range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.
产品特点
-
Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
- High section-to-section isolation enabling multiple combinations
- High Doherty efficiency thanks to 2 : 1 asymmetry
- Integrated temperature compensated bias
- Biasing of individual stages is externally accessible
- Integrated ESD protection
- Excellent thermal stability
- High power gain
- On-chip matching for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
| 产品应用
-
RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequency
range. Possible circuit topologies are the following:
- Asymmetric final stage in Doherty configuration
- Asymmetric driver for high power Doherty amplifier
|
订购型号
订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
BLM7G1822S-80AB | HSOP16F (SOT1211-1) | sot1211-1_po | | Reel Dry Pack, SMD, 13" Q1/T1 | 开发 | Standard Marking | BLM7G1822S-80ABY( 9340 687 26518 ) |
品质、可靠性及RoHS化学成分
订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF(小时) | 潮湿敏感度等级 | MSL LF |
BLM7G1822S-80AB | BLM7G1822S-80ABY | | | | 3 | | | |
产品技术资料