BUK7Y7R2-60E: N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS® technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
SOT669
- Q101 Compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th
) rating of greater than 1 V at 175 °C
Data Sheets (1)
Application Notes (6)
Selector Guides (1)
Package Information (1)
Packing (1)
Reports or Presentations (1)
Supporting Information (1)
SPICE model
Thermal design
Thermal model
Ordering Information
Product | Status | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | RDSon [typ] @ VGS = 10 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | RDSon [max] @ Tj = 175 °C (mΩ) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | ID [max] @ T = 100 °C (A) | IDM [max] (A) | Ciss [typ] (pF) | Coss [typ] (pF) | Date | Rth(j-mb) [max] (K/W) |
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BUK7Y7R2-60E | Active | SOT669 | LFPAK56; Power-SO8 | N | 1 | 60 | 7.2 | | | | 4.5 | 100 | 15.8 | 50.8 | | 50.8 | 167 | 16.1 | 25.6 | 3 | Y | 72 | 407 | 2596 | 351 | 2013-11-07 | 0.9 |
Package Information
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | MSL | MSL LF |
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BUK7Y7R2-60E | | SOT669 | | Reel 7" Q1/T1 | Active | BUK7Y7R2-60EX
(9340 678 92115) | 77E260 | BUK7Y7R2-60E | | 1 | 1 |