MHT1008N: 2450 MHz, 12.5 W CW, 28 V RF LDMOS Transistor for Consumer and Commercial Cooking

For additional information contact NXP® Semiconductor.

PLD-1.5W Image
特性
  • Characterized with series equivalent large-signal impedance parameters and common source S-parameters
  • Qualified for operation at 32 Vdc
  • Integrated ESD protection
  • 150°C case operating temperature
  • 150°C die temperature capability
  • RoHS Compliant
特性
  • Consumer cooking as PA driver
  • Commercial cooking as PA driver
Data Sheets (1)
Name/DescriptionModified Date
MHT1008N 12.5 W CW, 2450 MHz, 28 V Data Sheet (REV 0) PDF (409.6 kB) MHT1008N08 May 2016
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins (REV A) PDF (55.3 kB) 98ASA00476D15 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MHT1008NT1Active24502450284112.512.5 @ CWCW18.6 @ 245056.32.6UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
PLD-1.5W98ASA00476DMPQ - 1000 REELPOQ - 1000 REELActiveMHT1008NT1MHT1008NT1.pdf3260
MHT1008N 12.5 W CW, 2450 MHz, 28 V Data Sheet MHT1008N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MHT1008N 2450 MHz PCB DXF file MHT1008N
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins aft09ms015n
MHT1008NT1.pdf MHT1008N