MMRF1007H: 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
NI-1230H-4S, NI-1230S-4S Package Image
特性
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20 dB Drain Efficiency: 56%
- Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push-Pull Operation
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
- These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet (REV 0) PDF (812.6 kB) MMRF1007H | 27 Dec 2013 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C | 05 Apr 2016 |
| 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C | 23 Feb 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1007HSR5 | Active | 965 | 1215 | 50 | 60 | 1000 | 1000 @ Peak | Pulse | 20 @ 1030 | 56 | 0.02 | Unmatched | AB | LDMOS | |
| MMRF1007HR5 | Active | 965 | 1215 | 50 | 60 | 1000 | 1000 @ Peak | Pulse | 20 @ 1030 | 56 | 0.02 | Unmatched | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230 | 98ASB16977C | MPQ - 50 REELPOQ - 50 REEL | Active | MMRF1007HR5 | MMRF1007HR5.pdf |   | 260 |
| NI-1230S | 98ARB18247C | MPQ - 50 REELPOQ - 50 REEL | Active | MMRF1007HSR5 | MMRF1007HSR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MMRF1007HR5.pdf MMRF1007H
- 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MMRF1007HSR5.pdf MMRF1007H
