MMRF1012N: 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET
TO-270-2 Package Image
特性
- Typical CW Performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power Gain: 23.9 dB Drain Efficiency: 62%
- Capable of Handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet (REV 0) PDF (1.4 MB) MMRF1012N | 24 Jul 2014 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A | 26 Feb 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1012NR1 | Active | 10 | 450 | 50 | 40 | 10 | 10 @ CW | 1-Tone | 23.9 @ 220 | 62 | 3 | Unmatched | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270-2 | 98ASH98117A | MPQ - 500 REELPOQ - 500 BOX | Active | MMRF1012NR1 | MMRF1012NR1.pdf |  | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- RF Products Selector Guide MMT20303H
- 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
- MMRF1012NR1.pdf MMRF1012N
