MMRF1016H: 2-500 MHz, 600 W, 50 V Broadband RF Power MOSFET
NI-1230H-4S Package Image
特性
- Typical DVB-T OFDM Performance: VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain: 25 dB Drain Efficiency: 28.5% ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Bandwidth
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 2600 mA, Pout = 600 W Peak, f = 225 MHz, Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 25.3 dB Drain Efficiency: 59%
- Capable of Handling 10:1 VSWR @ 50 Vdc, 225 MHz, 600 W Peak Power, Pulse Width = 100 µsec, Duty Cycle = 20%
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- CW Operation Capability with Adequate Cooling
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push-Pull Operation
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1016HR5 2-500 MHz, 600 W, 50 V Broadband RF Power MOSFET - Data Sheet (REV 0) PDF (995.7 kB) MMRF1016H | 24 Jul 2014 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C | 05 Apr 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1016HR5 | Active | 2 | 500 | 50 | 57.8 | 600 | 125 @ AVG | OFDM | 25 @ 225 | 28.5 | 0.2 | Unmatched | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230 | 98ASB16977C | MPQ - 50 REELPOQ - 50 BOX | Active | MMRF1016HR5 | MMRF1016HR5.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- RF Products Selector Guide MMT20303H
- 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MMRF1016HR5.pdf MMRF1016H
