MMRF1019N: 1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor
PLD-1.5W Image
特性
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 10 mA, Pout = 10 W Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 25 dB Drain Efficiency: 69%
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R4 Suffix = 100 Units, 16 mm Tape Width, 7-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1019NR4 1090 MHz, 10 W, 50 V Pulse RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (416.2 kB) MMRF1019N | 24 Jul 2014 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1019NR4 | Active | 960 | 1400 | 50 | 40 | 10 | 10 @ Peak | Pulse | 25 @ 1090 | 69 | 1.6 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| PLD-1.5 | 98ASB15740C | MPQ - 100 REELPOQ - 100 BOX | Active | MMRF1019NR4 | MMRF1019NR4.pdf |  | 3 | 260 |
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins MRFG35003N6AT1
- MMRF1019NR4.pdf MMRF1019N
