MMRF1310H: 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs

NI-780H-4L, NI-780S-4L Package Image
特性
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • NI-780H-4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • NI-780S-4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet (REV 0) PDF (524.7 kB) MMRF1310H24 Jul 2014
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D21 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1310HSR5Active1.86005054.8300300 @ CW1-Tone25 @ 130800.19UnmatchedABLDMOS
MMRF1310HR5Active1.86005054.8300300 @ CW1-Tone25 @ 130800.19UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780-498ASA10793DMPQ - 50 REELPOQ - 50 REELActiveMMRF1310HR5MMRF1310HR5.pdf260
NI-780S-498ASA10718DMPQ - 50 REELPOQ - 50 REELActiveMMRF1310HSR5MMRF1310HSR5.pdf260
MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet MMRF1310H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASA10793D MMRF1310H
MMRF1310HR5.pdf MMRF1310H
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MMRF1310HSR5.pdf MMRF1310H