MMRF1314H: 1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors _ BDTIC a Leading Distributor in China

MMRF1314H: 1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

特性

Internally input and output matched for broadband operation and ease of use
Device can be used in a single-ended, push-pull, or quadrature configuration
Qualified up to a maximum of 52 VDD operation
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
Characterized with series equivalent large-signal impedance parameters
RoHS Compliant

特性

Military and commercial L-Band radar systems

Data Sheets (1)

Name/Description	Modified Date
MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet (REV 0) PDF (435.4 kB) MMRF1314H	25 Mar 2016

Application Notes (2)

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908	24 Feb 2011

Engineering Bulletins (1)

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Brochures (1)

Name/Description	Modified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611	16 May 2016

Selector Guides (1)

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Package Information (2)

Name/Description	Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C	05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C	23 Feb 2016

Supporting Information (1)

Name/Description	Modified Date
RF Military High Power Avionics Devices (REV 0) PDF (726.5 kB) MILITARY_HIGH_POWER_RADAR_TRN_SI	25 Mar 2016

Ordering Information

Product	Status	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MMRF1314HSR5	Active		1200	1400	52	60	1000	1000 @ Peak	Pulse	15.5 @ 1200	46.5	0.018	I/O	AB	LDMOS
MMRF1314GSR5	Active		1200	1400	52	60	1000	1000 @ Peak	Pulse	15.5 @ 1200	46.5	0.018	I/O	AB	LDMOS
MMRF1314HR5	Active		1200	1400	52	60	1000	1000 @ Peak	Pulse	15.5 @ 1200	46.5	0.018	I/O	AB	LDMOS

Package Information

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	PPT (°C)
NI-1230-4S GULL	98ASA00459D	MPQ - 50 REELPOQ - 50 BOX	Active	MMRF1314GSR5	MMRF1314GSR5.pdf		260
NI-1230	98ASB16977C	MPQ - 50 REELPOQ - 50 BOX	Active	MMRF1314HR5	MMRF1314HR5.pdf		260
NI-1230S	98ARB18247C	MPQ - 50 REELPOQ - 50 BOX	Active	MMRF1314HSR5	MMRF1314HSR5.pdf		260

MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet MMRF1314H

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Aerospace and Defense Solutions Brochure MMRF5300N

RF Products Selector Guide MMT20303H

RF Military High Power Avionics Devices MMRF2010N

98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins mrfe6vp61k25h

MMRF1314GSR5.pdf MMRF1314H

98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MMRF1314HR5.pdf MMRF1314H

98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MMRF1314HSR5.pdf MMRF1314H

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